22/07/2016
Fundraising: closing Series A first tranche
G-ray Switzerland could successfully achieve the closing of its Series A first tranche.
29/03/2016
Low temperature direct bonding process
The G-ray team has defined a direct bonding process at low temperature allowing an efficient charge collection across bonded semiconductor wafers.…
13/01/2016
Proof of concept
The G-ray team could achieve an efficient charge collection across bonded interfaces. By demonstrating the validity of this effect, the company is…
01/11/2015
Move to Innoparc
G-ray rents a new facility at Innoparc in Hauterive (Neuchâtel) where the company will build up an ISO 7 Class cleanroom to be used for its epitaxy…
05/10/2015
Neuchâtel support
The State of Neuchâtel Economic Affairs department has confirmed its support to the G-ray project by ratifying an agreement to facilitate the…
02/08/2015
Advisory Board
We have the pleasure to report that Dr. Hans Brändle, former CEO of Oerlikon Coating has joined G-ray advisory board. Dr. Brändle brings a unique…
13/04/2015
System Architect
We have the pleasure to report that Dr. Klaus Bethke, former development manager and System Architect at Philips Panalytical X-ray joined the G-ray…
19/03/2015
CERN collaboration
In addition to its CTI funding application, G-ray entered in a collaboration with CERN to characterize a new low temperature direct bonding of…