04/03/2019
G-ray presents its latenium™ technology at the 15th Vienna Conference on Instrumentation
Towards wafer-scale monolithic CMOS integrated pixel detectors for X-ray photon counting Hauterive, Neuchatel, 21 February 2019 A new semiconductor…
22/10/2016
New patent filed (5)
US Patent and Trademark Office acknowledged receipt of the following provisional patent application: Application number: US 62/381,647 Inventor: Hans…
29/03/2016
Low temperature direct bonding process
The G-ray team has defined a direct bonding process at low temperature allowing an efficient charge collection across bonded semiconductor wafers.…
11/03/2016
New patent filed (4)
US Patent and Trademark Office acknowledged receipt of the following provisional patent application: Application number: US 62/334,514 Inventor: Hans…
16/02/2016
New patent filed (3)
US Patent and Trademark Office acknowledged receipt of the following provisional patent application: Application number: US 62/295,720 Inventor: Hans…
13/01/2016
Proof of concept
The G-ray team could achieve an efficient charge collection across bonded interfaces. By demonstrating the validity of this effect, the company is…
19/03/2015
CERN collaboration
In addition to its CTI funding application, G-ray entered in a collaboration with CERN to characterize a new low temperature direct bonding of…
16/03/2015
CTI support
The Commission for Technology and Innovation approved G-ray’s funding application. The Pixisens project supports the development of low temperature…